Study of the new $\beta$-In2S3 containing Na thin films. Part II: Optical and electrical characterization of thin films

Title Study of the new $\beta$-In2S3 containing Na thin films. Part II: Optical and electrical characterization of thin films
Author: Barreau, N; Bern\`{e}de, J. C. & Marsillac, S.
Journal of Crystal Growth, 2002
2002
http://linkinghub.elsevier.com/retrieve/pii/S0022024802012435
More details: The optical and electrical properties of the new [In16]Oh[In5.33-xNa3x?��2.66- 2x]TdS32 (BINS) thin films have been studied. The determination of the optical band gap of films containing different rates of sodium has shown that it linearly increases from 2.10 eV, when the films are pure $\beta$-In2S3, to 2.95 eV, when their sodium content corresponds to x .9 i.e. [In16]Oh[In4.4Na2.7?��0.9]TdS32 compound. This evolution of the band gap has been discussed in terms of In-S bond length and electronegativity of Na and In elements. All the BINS thin films have an n-type electrical conductivity, which decreases from 4 ?� 10-7 to 10-7 S cm-1 when x increases from 0.05 to 0.9, respectively. The electrical conductivity of pure $\beta$-In2S3 has been found around 2 ?� 10-8 S cm-1, which is lower than that of films containing sodium. The variation of the room conductivity of the films is related to the sodium distribution in the crystalline structure. ?? 2002 Elsevier Science B.V. All rights reserved.A1. Electrical properties,A1. Optical properties,A3. Physical vapor deposition processes,B1. New materials,B2. Semicinducting materials,B3. Optoelectronical devices
ISBN3325112552