1.33 - Precursor Chemistry ??? Main Group Metal Oxides

Title 1.33 - Precursor Chemistry ?�� Main Group Metal Oxides
Author: Pugh, D; Bloor, L; Moniz, S & Carmalt, C J
, Elsevier 2013
2013
http://www.sciencedirect.com/science/article/pii/B9780080977744001340
More details: Abstract This chapter describes precursor complexes that have been utilized to deposit thin films of main-group metal oxides. An overview of the wide range of precursors that have been reported for the growth of these oxides, which includes metal alkoxides and $\beta$-diketonates, is presented including synthetic details. A number of techniques have been used to deposit the metal oxide films, such as chemical vapor deposition (CVD), atomic layer deposition (ALD), and sol?��gel, and the technique employed is described. The focus of the chapter is on the chemistry of precursors to the thin films, although mention has also been made of techniques (such as ALD), which tend to utilize simple, commercially available precursors in combination with a secondary oxygen source. The first section describes precursors for the deposition of aluminum oxide, gallium oxide, and indium oxide. Group 13 oxides have a fascinating range of chemistry and find application as components of high-temperature superconductors, transparent conducting oxides (TCOs), and gas sensors. These applications tend to use doped-group 13 metal oxides, and precursors to these materials have been highlighted at the end of the section. The second section describes the range of precursors that have been used for the formation of group 14 oxide thin films. These materials find application in everyday life from silicon dioxide, or silica, which is widely used in electronics manufacturing, to tin dioxide that is commonly used for gas sensors as well as \{TCO\} applications. These oxides have been deposited using a variety of methods that can alter the final properties of the films. In most cases, commercially available precursors have been employed, for example, tin halides and organotin precursors for SnO2, with the addition of an oxygen source (usually H2O, H2O2, O2, and O3); however, there are a few reported examples of more sophisticated precursors which are described as well as a brief overview of doped-group 14 metal oxides. The last section gives an overview of the precursors developed for the deposition of group 15 and 16 metal oxides ?�� including antimony oxide, bismuth oxide, and tellurium oxide. Thin films of the binary group 15 and 16 oxides have limited applications in comparison to the corresponding group 13 and 14 oxides, for example, antimony oxide finds use in catalysis and gas sensor devices and bismuth oxide are of interest in high Tc superconductors and potentially for fuel cells. Aluminum oxide,Antimony oxide,Bismuth oxide,CVD,Ferroelectric,Gallium aluminum oxide,Gallium oxide,Gallium zinc oxide,Germanium oxide,Indium oxide,Indium tin oxide,Lead oxide,Molecular precursors,Single-source precursors,Tellurium oxide,Thallium oxide,Tin oxide,Transparent conducting oxide
ISBN978-0-08-096529-1