Title Barrier height enhancement of Pt/n-InP Schottky diodes by P2S5/(NH4)2S solution treatment of the InP surface
Author: Huang, T S & Fang, R S
Solid-State Electronics, 1994
1994
http://www.sciencedirect.com/science/article/pii/003811019490152X
More details: The effect of (NH2)2S and P2S5/(NH4)S solution treatment on the electrical characteristics of Pt/n-InP Schottky diodes has been investigated. The barrier heights of the diodes fabricated on these sulfidation treated n-InP wafers can be enhanced and the reverse current reduced, especially in P2S5/(NH4)2S (0.02 g/ml) solution treatment. Auger electron spectroscopy analysis on the P2S5/(NH4)2S-treated wafers, indicated that surface In atoms are mainly bonded to S atoms while there is no P-S bonding. Furthermore, a thin layer of In2S3, which is believed to act as an important role for the barrier height enhancement of the diode, on the P2S5/(NH4)2S-treated wafer has been identified.
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