Growth and process identification of CuInS2 on GaP by chemical vapor deposition

Title Growth and process identification of CuInS2 on GaP by chemical vapor deposition
Author: Hwang, H L; Sun, C Y; Fang, C S; Chang, S D; Cheng, C H; Yang, M H; Lin, H H & Tuwan-Mu, H
Journal of Crystal Growth, 1981
1981
http://www.sciencedirect.com/science/article/pii/0022024881902785
More details: Experimental techniques for growing CuInS2 layers on GaP substrates by the metalorganic method have been developed. Hydrogen sulfide gas together with the vapors of CuCl(NCCH3)n and InCl3(NCCH3) both of which were generated by bubbling nitrogen through sources, using a solvent of acetonitride, were used as transport agents. Various characterization techniques such as atomic absorption (AA), neutron activation analysis (NAA), energy dispersive analysis by X-rays (EDAX), Rutherford back-scattering analysis (RBS), and X-ray analyses were used to help understand the fundamental mechanism of the \{CVD\} growth.