Joachim; Rech

Title Joachim; Rech
Author: "M\"{u}ller
Bernd; Springer, Andrew R","Indium tert-butylthiolates as single source precursors for indium sulfide thin films: Is molecular design enough?","Journal of Organometallic Chemistry",449,1-2,"May","95--104",1993,",","http://www.sciencedirect.com/science/article/pii/0022328X9380111N http://linkinghub.elsevier.com/retrieve/pii/0022328X9380111N",",",",",",",",",",",",","The dimeric indium thiolates [R2In($\mu$-StBu)]2 R ?�? tBu (1) D K C & Sarginson George","C",",,,","79--206",1980,",","http://www.sciencedirect.com/science/article/pii/B9780080238883500117","Solar Energy Index",",",","Machovec deposition at temperatures between 290 and 350??C results in the formation of indium rich films (In: S ?�? 2) consisting of indium metal and orthorhombic InS
George","C",",,,","79--206",1980,",","http://www.sciencedirect.com/science/article/pii/B9780080238883500117","Solar Energy Index",",",","Machovec
George","Pergamon",",",",",",",",",","," 5,"978-0-08-023888-3","Machovec1980a","Machovec
More details: they consist of an indium rich phase and In2S3. The dependence of the film composition i.e.indium rich versus stoichiometric InS and structure (orthorhombic versus tetrag onal InS) with the deposition temperature and molecular precursor is discussed with respect to the decomposition pathways available to the precursor molecules (1?��3). Based on these results compound 4 was proposed to be a suitable precursor for the low temperature deposition of stoichiometric InSindeed its solid state pyrolysis does yield InS. Howeveralthough low pressure \{MOCVD\} using 4 yields amorphous films of stoichiometry InSupon annealing $\beta$-In2S3 is formed as the crystalline phase. The efficacy of molecular design of solid state materials is discussed. The indium thiolates were characterized by 1H and 13C \{NMR\} spectroscopy and mass spectrometry. Analysis of the deposited films has been obtained by X-ray photoelectron spectroscopy (XPS) and transmission electron microscopy (TEM)

is the only product deposited. Use of compound 3 as the precursor results in amorphous indium rich films being deposited at 300??C. While films grown from 3 at 400??C have a In: S ratio of 1