Lauri","Growth of conductive copper sulfide thin films by atomic layer deposition","Journal of Materials Chemistry",12,,","1022--1026",2002,",",",",",",",",",",",",",",",",",",","

Title Lauri","Growth of conductive copper sulfide thin films by atomic layer deposition","Journal of Materials Chemistry",12,,","1022--1026",2002,",",",",",",",",",",",",",",",",",","," 7,","Johansson2002","Johansson
Author: "Johansson, Johanna; Kostamo, Juhana; Karppinen, Maarit & Niinist\"{o}
Johanna; Kostamo, C Sudha; Vijayakumar Lauri","Growth of conductive copper sulfide thin films by atomic layer deposition",",,,","1022--1026",2002,",",",",",",",",",",",",",",",",",","," 7,","John1994a","John B. & Mathai with In/S ratio 2/3 in the solution
B. & Mathai
Industrial Chemistry/Chemical Engineering
More details: X-ray photoelectron spectroscopyoptical absorptiontransmission and electrical measurements. Optical constants of the films were calculated using the envelope method. Annealing did not affect the optical properties of the film muchbut the resistivity of the films showed a drastic decrease and the grain size increased. In2S3 thin films have potential use as buffer layer in photovoltaic heterojunction devices. ",","Grain sizeIn2S3 thin films

scanning electron microscopy